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CLASS: PUBLIC
SUMMARY:ACMiN Seminar. Spin-charge interconversion in 2D van der Waal materials
DESCRIPTION:The lecture entitled "Spin-charge interconversion in 2D van der
  Waal materials" will be delivered by Dr Safeer Chenattukuzhiyil, a Researc
 h Fellow in the Department of Physics at the University of Oxford.\n\nDetai
 ls\n\n 	time: 8.30am 	location: ACMiN, building D-10, room C \n\nAbstract\n
 \nGraphene has been known as an excellent material for long-distance spin t
 ransport due to its weak spin-orbit coupling (SOC). However, the same reaso
 n makes graphene an adverse candidate for different spintronics application
 s in which strong SOC is required, such as the spin-charge interconversion 
 applications. It was predicted theoretically that SOC can be induced in gra
 phene so that spin-orbit phenomena such as spin Hall effect (SHE) or Rashba
 -Edelstein effect can be obtained. In our work, by using van der Waals hete
 rostructure-based lateral spin valve, we experimentally demonstrated the fi
 rst unambiguous measurement of spin-to-charge conversion (SCC) due to SHE i
 n graphene via spin-orbit proximity with transition metal dichalcogenides (
 TMD), MoS2 and WSe2. We extended similar experiments in graphene combined w
 ith an insulator, Bi2O3 and CuOx. Then we demonstrated gate tunable SHE in 
 graphene with SCC efficiency larger than in some of the best SCC materials 
 such as topological insulators. Using a similar approach, we performed anot
 her set of experiments demonstrating large-efficiency SCC in semi metallic 
 TMDs such as MoTe2, NbSe2, and TaS2. Also, due to the low symmetry crystal 
 structure of these materials, we detect, along with the conventional SCC, u
 nconventional SCCs where the spin polarization, the spin current and the ch
 arge current are not mutually orthogonal to each other. In summary, all the
 se different experiments spread light into the understanding of spin-orbit 
 effects in van der Waal materials opening exciting opportunities in a varie
 ty of future spintronics and nanomagnetism applications.
DTSTAMP:20260213T074158Z
DTSTART:20260211T073000Z
DTEND:20260211T090000Z
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